january 2006 fds6673BZ p-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation fds6673BZ rev. b www.fairchildsemi.com 1 fds6673BZ p-channel powertrench ? mosfet -30v, -14.5a, 7.8m ? general description this p-channel mosfet is produced using fairchild semiconductor?s advanced power trench process that has been especially tailored to minimize the on-state resistance. this device is well suited for power management and load switching applications common in notebook computers and portable battery packs. features ? max r ds(on) = 7.8m ?, v gs = -10v, i d = -14.5a ? max r ds(on) = 12m ?, v gs = -4.5v, i d = -12a ? extended v gs range (-25v) for battery applications ? hbm esd protection level of 6.5k v typical (note 3) ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant 1 7 5 2 8 4 6 3 s d s s so-8 d d d g mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -30 v v gs gate to source voltage 25 v i d drain current -continuous (note1a) -14.5 a -pulsed -75 a p d power dissipation for single operation (note1a) 2.5 w (note1b) 1.2 (note1c) 1.0 t j , t stg operating and storage temperature -55 to 150 c r ja thermal resistance , junction to ambient (note 1a) 50 c/w r jc thermal resistance , junction to case (note 1) 25 c/w device marking device reel size tape width quantity fds6673BZ fds6673BZ 13?? 12mm 2500 units www.datasheet.co.kr datasheet pdf - http://www..net/
fds6673BZ p-channel powertrench ? mosfet fds6673BZ rev. b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = -250 a, v gs = 0v -30 v ? b vdss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -20 mv/ c i dss zero gate voltage drain current v ds = -24v, v gs = 0v -1 a i gss gate to source leakage current v gs = 25v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -1 -1.9 -3 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 8.1 mv/ c r ds(on) drain to source on resistance v gs = -10v , i d = -14.5a 6.5 7.8 m ? v gs = -4.5v, i d = -12a 9.6 12 v gs = -10v, i d = -14.5a t j = 125 o c 9.7 12 g fs forward transconductance v ds = -5v, i d = -14.5a 60 s (note 2) dynamic characteristics c iss input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz 3500 4700 pf c oss output capacitance 600 800 pf c rss reverse transfer capacitance 600 900 pf switching characteristics t d(on) turn-on delay time v dd = -15v, i d = -1a v gs = -10v, r gs = 6 ? 14 26 ns t r rise time 16 29 ns t d(off) turn-off delay time 225 36 ns t f fall time 105 167 ns q g total gate charge v ds = -15v, v gs = -10v, i d = -14.5a 88 124 nc q g total gate charge v ds = -15v, v gs = -5v, i d = -14.5a 46 65 nc q gs gate to source gate charge 8 nc q gd gate to drain charge 23.5 nc (note 2) drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0v, i s = -2.1a -0.7 -1.2 v t rr reverse recovery time i f = 14.5a, di/dt = 100a/ s 45 ns q rr reverse recovery charge i f = 14.5a, di/dt = 100a/ s 34 nc notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user?s board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width < 300 s, duty cycle < 2.0%. 3: the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied. a) 50 o c/w (10 sec) when mounted on a 1 in 2 pad of 2 oz copper b) 105 o c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125 o c/w when mounted on a minimun pad www.datasheet.co.kr datasheet pdf - http://www..net/
fds6673BZ p-channel powertrench ? mosfet fds6673BZ rev. b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics 01234 0 10 20 30 40 50 60 70 80 pulse duration = 80 s duty cycle = 0.5%max v gs = - 5v v gs = - 4v v gs = - 3v v gs = - 3.5v v gs = - 4.5v v gs = - 10v -i d , drain current (a) -v ds , drain to source voltage (v) figure 2. 10 20 30 40 50 60 70 80 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 v gs = -10v v gs = -5v v gs = -4.5v v gs = -3.5v v gs = -4v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) normalized on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = -14.5a v gs = -10v normalized on resistance vs junction temperature figure 4. 246810 0 5 10 15 20 25 r ds(on) , drain to source on-resistance ( m ? ) -v gs , gate to source voltage (v) t j = 25 o c t j = 150 o c i d = -7a pulse duration = 80 s duty cycle = 0.5%max on-resistance vs gate to source voltage figure 5. transfer characteristics 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 t j = -55 o c t j = 25 o c t j = 150 o c pulse duration = 80 s duty cycle = 0.5% max v ds = -6v -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) 00 source to drain diode forward voltage vs source current www.datasheet.co.kr datasheet pdf - http://www..net/
fds6673BZ p-channel powertrench ? mosfet fds6673BZ rev. b www.fairchildsemi.com 4 figure 7. 0 20 40 60 80 100 0 2 4 6 8 10 v dd = -20v v dd = -10v - v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -15v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 f = 1mhz v gs = 0v capacitance (pf) - v ds , drain to source voltage (v) c rss c oss c iss 6000 capacitance vs drain to source voltage figure 9. 0 5 10 15 20 25 30 35 1e-4 1e-3 0.01 0.1 1 10 100 1000 t j = 150 o c t j = 25 o c -i g (ua) -v gs (v) i g vs v gs figure 10. 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 t j = 125 o c t j = 25 o c -i as , avalanche current(a) 40 t av , time in avalanche(ms) unclamped inductive switching capability figure 11. 25 50 75 100 125 150 0 4 8 12 16 v gs = -10v v gs = -4.5v -i d , drain current (a) t a , ambient temperature ( o c ) maximum continuous drain current vs ambient temperature figure 12. 0.1 1 10 100 0.01 0.1 1 10 100 single pulse t j =max rated t a = 25 o c operation in this area may be limited by r ds(on) dc 1s 1ms 100ms 1ms 100us 10us -i d , drain current (a) -v ds , drain to source voltage (v) forward bias safe operating area typical characteristics t j = 25c unless otherwise noted www.datasheet.co.kr datasheet pdf - http://www..net/
fds6673BZ p-channel powertrench ? mosfet fds6673BZ rev. b www.fairchildsemi.com 5 figure 13. single pul se maximum power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 single pulse v gs = -10v p ( pk ) , peak transient power ( w ) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - figure 14. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted www.datasheet.co.kr datasheet pdf - http://www..net/
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